WPI, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
Department of Physics, University of York, Heslington, York YO10 5DD, UK.
Nat Commun. 2014;5:3239. doi: 10.1038/ncomms4239.
Dislocation defects together with their associated strain fields and segregated impurities are of considerable significance in many areas of materials science. However, their atomic-scale structures have remained extremely challenging to resolve, limiting our understanding of these ubiquitous defects. Here, by developing a complex modelling approach in combination with bicrystal experiments and systematic atomic-resolution imaging, we are now able to pinpoint individual dislocation cores at the atomic scale, leading to the discovery that even simple magnesium oxide can exhibit polymorphism of core structures for a given dislocation species. These polymorphic cores are associated with local variations in strain fields, segregation of defects, and electronic states, adding a new dimension to understanding the properties of dislocations in real materials. The findings advance our fundamental understanding of basic behaviours of dislocations and demonstrate that quantitative prediction and characterization of dislocations in real materials is possible.
位错缺陷及其相关的应变场和偏析杂质在材料科学的许多领域都具有重要意义。然而,它们的原子尺度结构仍然极其难以解析,限制了我们对这些普遍存在的缺陷的理解。在这里,通过开发复杂的建模方法,结合双晶实验和系统的原子分辨率成像,我们现在能够在原子尺度上精确定位单个位错核心,从而发现即使是简单的氧化镁也可以表现出给定位错种类的核心结构的多晶型性。这些多晶型核心与应变场、缺陷偏析和电子态的局部变化有关,为理解真实材料中位错的性质增添了新的维度。这些发现增进了我们对位错基本行为的基本理解,并证明了在真实材料中位错的定量预测和表征是可能的。