School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, 100084, China.
Nat Commun. 2023 Jan 11;14(1):162. doi: 10.1038/s41467-023-35877-7.
Defects in crystals play a fundamental role in modulating mechanical, electrical, luminescent, and magnetic behaviors of materials. However, accurate measurement of defect structures is hindered by symmetry breaking and the corresponding complex modifications in atomic configuration and/or crystal tilt at the defects. Here, we report the deep-sub-angstrom resolution imaging of dislocation cores via multislice electron ptychography with adaptive propagator, which allows sub-nanometer scale mapping of crystal tilt in the vicinity of dislocation cores and simultaneous recovery of depth-dependent atomic structure of dislocations. The realization of deep-sub-angstrom resolution and depth-dependent imaging of defects shows great potential in revealing microstructures and properties of real materials and devices.
晶体中的缺陷在调节材料的力学、电学、发光和磁学性能方面起着至关重要的作用。然而，由于对称性的破坏以及缺陷处原子构型和/或晶体倾斜的相应复杂变化，对缺陷结构的精确测量受到了阻碍。在这里，我们通过使用自适应传播子的多层面电子相衬术实现了位错芯的深亚埃分辨率成像，这使得能够对位错芯附近的晶体倾斜进行亚纳米级尺度的映射，并同时恢复位错的深度相关原子结构。实现深亚埃分辨率和缺陷深度相关成像的潜力巨大，有望揭示真实材料和器件的微观结构和性质。
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