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脑深部刺激电极植入多年后的电极阻抗变化

Variation in deep brain stimulation electrode impedance over years following electrode implantation.

作者信息

Satzer David, Lanctin David, Eberly Lynn E, Abosch Aviva

机构信息

Department of Neurosurgery, University of Minnesota, Minneapolis, Minn., USA.

出版信息

Stereotact Funct Neurosurg. 2014;92(2):94-102. doi: 10.1159/000358014. Epub 2014 Feb 6.

Abstract

BACKGROUND

Deep brain stimulation (DBS) electrode impedance is a major determinant of current delivery to target tissues, but long-term variation in impedance has received little attention.

OBJECTIVES

To assess the relationship between electrode impedance and time in a large DBS patient population and characterize the relationship between contact activity and impedance.

METHODS

We collected retrospective impedance and programming data from 128 electrodes in 84 patients with Parkinson's disease, essential tremor or dystonia. Effects of time, contact activity, stimulation voltage and other parameters on impedance were assessed. We also examined impedance changes following contact activation and deactivation.

RESULTS

Impedance decreased by 73 Ω/year (p < 0.001), with 72% of contacts following a downward trend. Impedance was on average 163 Ω lower in active contacts (p < 0.001). Contact activation and inactivation were associated with a more (p < 0.001) and less (p = 0.016) rapid decline in impedance, respectively. Higher stimulation voltages were associated with lower impedance values (p < 0.001). Contact number and electrode model were also significant predictors of impedance.

CONCLUSIONS

Impedance decreases gradually in a stimulation-dependent manner. These trends have implications for long-term programming, the development of a closed-loop DBS device and current understanding of the electrode-tissue interface.

摘要

背景

脑深部电刺激(DBS)电极阻抗是决定电流传递至目标组织的主要因素,但阻抗的长期变化很少受到关注。

目的

在大量接受DBS治疗的患者群体中评估电极阻抗与时间的关系,并描述触点活动与阻抗之间的关系。

方法

我们收集了84例帕金森病、特发性震颤或肌张力障碍患者128个电极的回顾性阻抗和程控数据。评估时间、触点活动、刺激电压及其他参数对阻抗的影响。我们还检查了触点激活和失活后的阻抗变化。

结果

阻抗每年下降73Ω(p<0.001),72%的触点呈下降趋势。活跃触点的阻抗平均低163Ω(p<0.001)。触点激活和失活分别与阻抗更快(p<0.001)和更慢(p=0.016)的下降相关。更高的刺激电压与更低的阻抗值相关(p<0.001)。触点数量和电极型号也是阻抗的重要预测因素。

结论

阻抗以刺激依赖的方式逐渐降低。这些趋势对长期程控、闭环DBS设备的开发以及目前对电极-组织界面的理解具有重要意义。

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