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纤维组成和尺寸对纸栅氧化层晶体管性能的影响。

The influence of fibril composition and dimension on the performance of paper gated oxide transistors.

机构信息

CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica, Portugal.

出版信息

Nanotechnology. 2014 Mar 7;25(9):094007. doi: 10.1088/0957-4484/25/9/094007. Epub 2014 Feb 12.

DOI:10.1088/0957-4484/25/9/094007
PMID:24521999
Abstract

Paper electronics is a topic of great interest due the possibility of having low-cost, disposable and recyclable electronic devices. The final goal is to make paper itself an active part of such devices. In this work we present new approaches in the selection of tailored paper, aiming to use it simultaneously as substrate and dielectric in oxide based paper field effect transistors (FETs). From the work performed, it was observed that the gate leakage current in paper FETs can be reduced using a dense microfiber/nanofiber cellulose paper as the dielectric. Also, the stability of these devices against changes in relative humidity is improved. On other hand, if the pH of the microfiber/nanofiber cellulose pulp is modified by the addition of HCl, the saturation mobility of the devices increases up to 16 cm(2) V(-1) s(-1), with an ION/IOFF ratio close to 10(5).

摘要

纸电子学是一个备受关注的话题,因为它有可能制造出低成本、一次性和可回收的电子设备。最终目标是使纸张本身成为这种设备的一个活跃部分。在这项工作中,我们提出了选择定制纸张的新方法,旨在将其同时用作基于氧化物的纸场效应晶体管 (FET) 的基底和电介质。从所进行的工作中可以观察到,使用致密的微纤维/纳米纤维纤维素纸作为电介质可以降低纸 FET 中的栅漏电流。此外,这些器件对相对湿度变化的稳定性也得到了提高。另一方面,如果通过添加 HCl 来修改微纤维/纳米纤维纤维素纸浆的 pH 值,器件的饱和迁移率可提高至 16 cm(2) V(-1) s(-1),并且 ION/IOFF 比接近 10(5)。

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