Institut de Recherche Interdisciplinaire (IRI), CNRS USR 3078, Université Lille1, Parc de la Haute Borne, 50 avenue de Halley, BP 70478, 59658 Villeneuve d'Ascq, France.
Analyst. 2014 Apr 7;139(7):1726-31. doi: 10.1039/c3an02045b.
Nanostructured boron-doped diamond has been investigated as a sensitive impedimetric electrode for the detection of immunoglobulin G (IgG). The immunosensor was constructed in a three-step process: (i) reactive ion etching of flat boron-doped diamond (BDD) interfaces to synthesize BDD nanowires (BDD NWs), (ii) electrochemical deposition of nickel nanoparticles (Ni NPs) on the BDD NWs, and (iii) immobilization of biotin-tagged anti-IgG onto the Ni NPs. Electrochemical impedance spectroscopy (EIS) was used to follow the binding of IgG at different concentrations without the use of any additional label. A detection limit of 0.3 ng mL(-1) (2 nM) with a dynamic range up to 300 ng mL(-1) (2 μM) was obtained with the interface. Moreover, the study demonstrated that this immunosensor exhibits good stability over time and allows regeneration by incubation in ethylenediaminetetraacetic acid (EDTA) aqueous solution.
硼掺杂金刚石的纳米结构已被研究为用于检测免疫球蛋白 G（IgG）的灵敏阻抗电极。该免疫传感器通过三步过程构建：（i）对平面硼掺杂金刚石（BDD）界面进行反应离子刻蚀以合成 BDD 纳米线（BDD NWs），（ii）在 BDD NWs 上电化学沉积镍纳米颗粒（Ni NPs），以及（iii）将生物素标记的抗 IgG 固定到 Ni NPs 上。电化学阻抗谱（EIS）用于在不使用任何其他标记的情况下跟踪不同浓度 IgG 的结合。该界面的检测限为 0.3 ng mL(-1)（2 nM），动态范围高达 300 ng mL(-1)（2 μM）。此外，该研究表明，该免疫传感器具有良好的时间稳定性，并且可以通过在乙二胺四乙酸（EDTA）水溶液中孵育来进行再生。
