采用标准0.18微米互补金属氧化物半导体工艺制造的微磁场传感器。

Lin Yen-Nan, Dai Ching-Liang

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan.

Micromachines (Basel). 2018 Aug 7;9(8):393. doi: 10.3390/mi9080393.

Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense MF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to the magnetotransistor. The additional collectors enhance bias current and carrier number, so that the sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require post-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis MF and its sensitivity is 0.55 V/T in the y-axis MF.

对采用互补金属氧化物半导体（CMOS）技术开发的微磁场（MMF）传感器进行了研究。这些MMF传感器为三轴传感类型，包括一个磁晶体管和四个霍尔元件。磁晶体管用于检测x轴和y轴方向的磁场（MF），四个霍尔元件用于检测z轴方向的MF。除了发射极、基极和集电极外，磁晶体管还增加了额外的集电极。这些额外的集电极增强了偏置电流和载流子数量，从而提高了传感器的灵敏度。MMF传感器的制造很容易，因为它不需要CMOS后处理。实验表明，MMF传感器在x轴磁场中的灵敏度为0.69 V/T，在y轴磁场中的灵敏度为0.55 V/T。