Zhu Yan, Maurya Deepam, Priya Shashank, Hudait Mantu K
Advanced Devices & Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, ‡Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech , Blacksburg, Virginia 24061, United States.
ACS Appl Mater Interfaces. 2014 Apr 9;6(7):4947-53. doi: 10.1021/am405988f. Epub 2014 Mar 25.
Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.
通过分子束外延在原位生长拉伸应变的Ge/In0.16Ga0.84As异质结构，使用两个分开的生长室分别用于生长Ge和III-V族材料。可控的生长条件使得Ge层内存在0.75%的面内拉伸应变。高分辨率透射电子显微镜证实了具有高晶体质量的赝晶Ge以及清晰的Ge/In0.16Ga0.84As异质界面。原子力显微镜揭示了具有均一的二维交叉阴影表面形貌，均方根粗糙度为1.26nm。X射线光电子能谱表明与Ge/GaAs异质结构相比，隧穿势垒高度降低。优异的结构特性表明拉伸应变的Ge/In0.16Ga0.84As异质结构将是高性能和节能隧道场效应晶体管应用的一个有前景的候选材料。
