Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In Al As Stressors.

The indirect nature of silicon (Si) emission currently limits the monolithic integration of photonic circuitry with Si electronics. Approaches to circumvent the optical shortcomings of Si include band structure engineering via alloying (e.g., Si Ge Sn ) and/or strain engineering of group IV materials (e.g., Ge). Although these methods enhance emission, many are incapable of realizing practical lasing structures because of poor optical and electrical confinement. Here, we report on strong optoelectronic confinement in a highly tensile-strained (ε) Ge/InAlAs heterostructure as determined by X-ray photoemission spectroscopy (XPS). To this end, an ultrathin (∼10 nm) ε-Ge epilayer was directly integrated onto the InAlAs stressor using an in situ, dual-chamber molecular beam epitaxy approach. Combining high-resolution X-ray diffraction and Raman spectroscopy, a strain state as high as ε ∼ 1.75% was demonstrated. Moreover, high-resolution transmission electron microscopy confirmed the highly ordered, pseudomorphic nature of the as-grown ε-Ge/InAlAs heterostructure. The heterointerfacial electronic structure was likewise probed via XPS, revealing conduction- and valence band offsets (Δ and Δ ) of 1.25 ± 0.1 and 0.56 ± 0.1 eV, respectively. Finally, we compare our empirical results with previously published first-principles calculations investigating the impact of heterointerfacial stoichiometry on the ε-Ge/In Al As energy band offset, demonstrating excellent agreement between experimental and theoretical results under an AsGe interface stoichiometry exhibiting up to two monolayers of heterointerfacial As-Ge diffusion. Taken together, these findings reveal a new route toward the realization of on-Si photonics.