Graphene Research Centre, National University of Singapore , 6 Science Drive 2, Singapore 117546.
Nano Lett. 2014;14(4):1909-13. doi: 10.1021/nl4046922. Epub 2014 Mar 25.
Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2. The devices show low temperature mobilities up to 500 cm(2) V(-1) s(-1) and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of optical phonons as a limiting factor is discussed.
近期通过化学气相沉积（CVD）生长单层 MoS2 的成功，为将这些材料应用于薄膜电子和光电设备开辟了前景。在此，我们研究了高质量 CVD 生长的单层 MoS2 单晶的电子输运性质。这些器件在低温下的迁移率高达 500 cm2 V-1 s-1，在高掺杂密度下呈现出明显的金属导电特性。这些特性与文献中机械剥离的最佳单层 MoS2 的电子特性相当，验证了 CVD 生长材料的高电子质量。我们分析了不同的散射机制，并表明在低温下的高导电区，短程散射起主导作用。此外，还讨论了光学声子作为限制因素的影响。
