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沉积有二硫化钼的绝缘材料在传感应用方面具有前景。

Insulator Material Deposited with Molybdenum Disulphide Prospective for Sensing Application.

作者信息

Cutroneo Mariapompea, Malinsky Petr, Novak Josef, Maly Jan, Stofik Marcel, Slepicka Petr, Torrisi Lorenzo

机构信息

Department MIFT, Messina University, V. le F.S. d'Alcontres 31, Agata, 98166 S Messina, Italy.

Nuclear Physics Institute of CAS, v.v.i., Husinec-Řež 130, 250 68 Řež, Czech Republic.

出版信息

Micromachines (Basel). 2024 Nov 27;15(12):1425. doi: 10.3390/mi15121425.

DOI:10.3390/mi15121425
PMID:39770179
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11678107/
Abstract

Two-dimensional molybdenum disulfide (MoS) exhibits interesting properties for applications in micro and nano-electronics. The key point for sensing properties of a device is the quality of the material's surface. In this study, MoS layers were deposited on polymers by pulsed laser deposition (PLD). This process was monitored by a mass quadrupole spectrometer to record the emissions of MoS and evaluate the amount of molybdenum and sulfur compounds generated. The changes in laser parameters during the PLD strongly affect the properties of the formed MoS film. The exploration of the composition and structure of the films was followed by Attenuated Total Reflectance-Fourier Transform Infrared (ATR-FTIR), Atomic Force Microscopy (AFM), and mass quadrupole spectrometer (MQS). The possible application of the fabricated composite as a sensor is preliminarily considered.

摘要

二维二硫化钼(MoS)在微纳电子学应用中展现出有趣的特性。器件传感特性的关键在于材料表面的质量。在本研究中,通过脉冲激光沉积(PLD)将MoS层沉积在聚合物上。该过程由质量四极杆光谱仪进行监测,以记录MoS的发射情况并评估所产生的钼和硫化合物的量。PLD过程中激光参数的变化强烈影响所形成的MoS薄膜的性能。通过衰减全反射傅里叶变换红外光谱(ATR - FTIR)、原子力显微镜(AFM)和质量四极杆光谱仪(MQS)对薄膜的组成和结构进行了探究。初步考虑了所制备的复合材料作为传感器的可能应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/a9963f20b224/micromachines-15-01425-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/ddbb526c7971/micromachines-15-01425-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/baa2a15781d1/micromachines-15-01425-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/75d79832e8d8/micromachines-15-01425-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/701166db3cd7/micromachines-15-01425-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/265d75439a4c/micromachines-15-01425-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/50db46a3f088/micromachines-15-01425-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/fdf732f0399a/micromachines-15-01425-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/5341e2042c7a/micromachines-15-01425-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/a9963f20b224/micromachines-15-01425-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/ddbb526c7971/micromachines-15-01425-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/baa2a15781d1/micromachines-15-01425-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/75d79832e8d8/micromachines-15-01425-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/701166db3cd7/micromachines-15-01425-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/265d75439a4c/micromachines-15-01425-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/50db46a3f088/micromachines-15-01425-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/fdf732f0399a/micromachines-15-01425-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/5341e2042c7a/micromachines-15-01425-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7929/11678107/a9963f20b224/micromachines-15-01425-g009.jpg

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