Solar Energy Research Institute, Yunnan Normal University, Kunming 650092, P. R. China.
Nanoscale. 2014 May 21;6(10):5323-8. doi: 10.1039/c4nr00693c.
Sulphur-doped carbon-based materials have attracted a great deal of interest because of their important applications in the fields of oxygen reduction reactions, hydrogen storage, supercapacitors, photocatalysts and lithium ion batteries. Here, we report a new member of sulphur-doped carbon-based materials, i.e. sulphur doped graphene quantum dots (S-GQDs). The S-GQDs were prepared by a hydrothermal method using fructose and sulphuric acid as source materials. Absorption and photoluminescence investigations show that inter-band crossings are responsible for the observed multiple emission peaks. The incorporation of ∼1 at% of S into the quantum dots can effectively modify the electronic structure of the S-GQDs by introducing S-related energy levels between π and π* of C. The additional energy levels in the S-GQDs lead to efficient and multiple emission peaks.
掺杂硫的碳基材料由于在氧还原反应、储氢、超级电容器、光催化剂和锂离子电池等领域的重要应用而引起了极大的关注。在这里，我们报告了一种新的掺杂硫的碳基材料，即硫掺杂石墨烯量子点（S-GQDs）。S-GQDs 是通过水热法使用果糖和硫酸作为源材料制备的。吸收和光致发光研究表明，带间跃迁是观察到多个发射峰的原因。将约 1at%的 S 掺入量子点中，可以通过在 C 的 π 和 π*之间引入与 S 相关的能级，有效地修饰 S-GQDs 的电子结构。S-GQDs 中的附加能级导致了高效和多发射峰。
