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硫掺杂:一种简便的方法来调节石墨烯量子点的电子结构和光学性质。

Sulphur doping: a facile approach to tune the electronic structure and optical properties of graphene quantum dots.

机构信息

Solar Energy Research Institute, Yunnan Normal University, Kunming 650092, P. R. China.

出版信息

Nanoscale. 2014 May 21;6(10):5323-8. doi: 10.1039/c4nr00693c.

Abstract

Sulphur-doped carbon-based materials have attracted a great deal of interest because of their important applications in the fields of oxygen reduction reactions, hydrogen storage, supercapacitors, photocatalysts and lithium ion batteries. Here, we report a new member of sulphur-doped carbon-based materials, i.e. sulphur doped graphene quantum dots (S-GQDs). The S-GQDs were prepared by a hydrothermal method using fructose and sulphuric acid as source materials. Absorption and photoluminescence investigations show that inter-band crossings are responsible for the observed multiple emission peaks. The incorporation of ∼1 at% of S into the quantum dots can effectively modify the electronic structure of the S-GQDs by introducing S-related energy levels between π and π* of C. The additional energy levels in the S-GQDs lead to efficient and multiple emission peaks.

摘要

掺杂硫的碳基材料由于在氧还原反应、储氢、超级电容器、光催化剂和锂离子电池等领域的重要应用而引起了极大的关注。在这里,我们报告了一种新的掺杂硫的碳基材料,即硫掺杂石墨烯量子点(S-GQDs)。S-GQDs 是通过水热法使用果糖和硫酸作为源材料制备的。吸收和光致发光研究表明,带间跃迁是观察到多个发射峰的原因。将约 1at%的 S 掺入量子点中,可以通过在 C 的 π 和 π*之间引入与 S 相关的能级,有效地修饰 S-GQDs 的电子结构。S-GQDs 中的附加能级导致了高效和多发射峰。

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