Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India.
National Institute of Science Education and Research, Sachivalaya Marg, Bhubaneswar 751005, India.
Nanoscale Res Lett. 2014 Apr 26;9(1):192. doi: 10.1186/1556-276X-9-192. eCollection 2014.
Photon harvesting by reducing reflection loss is the basis of photovoltaic devices. Here, we show the efficacy of Al-doped ZnO (AZO) overlayer on ion beam-synthesized nanofaceted silicon for suppressing reflection loss. In particular, we demonstrate thickness-dependent tunable antireflection (AR) from conformally grown AZO layer, showing a systematic shift in the reflection minima from ultraviolet to visible to near-infrared ranges with increasing thickness. Tunable AR property is understood in light of depth-dependent refractive index of nanofaceted silicon and AZO overlayer. This improved AR property significantly increases the fill factor of such textured heterostructures, which reaches its maximum for 60-nm AZO compared to the ones based on planar silicon. This thickness matches with the one that shows the maximum reduction in surface reflectance.
81.07.-b; 42.79.Wc; 81.16.Rf; 81.15.Cd.
通过减少反射损失来收集光子是光伏器件的基础。在这里,我们展示了掺铝氧化锌 (AZO) 覆盖层在抑制反射损失方面对离子束合成的具有纳米多面硅的有效性。具体来说,我们展示了由共形生长的 AZO 层实现的厚度相关的可调反(AR)射,随着厚度的增加,反射最小值从紫外光到可见光再到近红外光范围发生系统的偏移。可调 AR 性能是根据纳米多面硅和 AZO 覆盖层的深度相关折射率来理解的。这种改进的 AR 性能显著提高了这种纹理异质结构的填充因子,与基于平面硅的结构相比,其填充因子在 60nm AZO 时达到最大值。这种厚度与显示表面反射率最大降低的厚度相匹配。
物理评论 B 辑,凝聚态物理 84, 164201 (2011); DOI: 10.1103/PhysRevB.84.164201