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采用n型空穴注入层的高效低压银纳米线基有机发光二极管。

Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer.

作者信息

Lee Hyungjin, Lee Donghwa, Ahn Yumi, Lee Eun-Woo, Park Lee Soon, Lee Youngu

机构信息

Department of Energy Systems Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 50-1 Sang-Ri, Hyeonpung-Myeon, Dalseong-Gun, Daegu, 711-873, Korea.

出版信息

Nanoscale. 2014 Aug 7;6(15):8565-70. doi: 10.1039/c4nr01768d.

Abstract

Highly flexible and efficient silver nanowire-based organic light-emitting diodes (OLEDs) have been successfully fabricated by employing a n-type hole injection layer (HIL). The silver nanowire-based OLEDs without light outcoupling structures exhibited excellent device characteristics such as extremely low turn-on voltage (3.6 V) and high current and power efficiencies (44.5 cd A(-1) and 35.8 lm W(-1)). In addition, flexible OLEDs with the silver nanowire transparent conducting electrode (TCE) and n-type HIL fabricated on plastic substrates showed remarkable mechanical flexibility as well as device performance.

摘要

通过采用n型空穴注入层(HIL),成功制备了高度灵活且高效的基于银纳米线的有机发光二极管(OLED)。没有光出射耦合结构的基于银纳米线的OLED表现出优异的器件特性,如极低的开启电压(3.6 V)以及高电流效率和功率效率(44.5 cd A⁻¹和35.8 lm W⁻¹)。此外,在塑料基板上制备的具有银纳米线透明导电电极(TCE)和n型HIL的柔性OLED既表现出卓越的机械柔韧性,又具备良好的器件性能。

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