Niemelä Matti, Kola Harri, Perämäki Paavo
Department of Chemistry, University of Oulu.
Anal Sci. 2014;30(7):735-8. doi: 10.2116/analsci.30.735.
High-purity germanium compounds (e.g. germanium dioxide) are used these days in several applications (e.g. germanium-based detectors, semiconductors, fiber-optic systems). Thus, reliable methods for the routine determination of trace element impurities from germanium compounds must be developed. In this study, inductively coupled plasma mass spectrometry, inductively coupled plasma optical emission spectrometry and/or electrothermal atomic-absorption spectrometry was used for the determination of fifteen impurity elements in germanium dioxide. Possible interference effects due to a germanium matrix were eliminated/minimized by a simple open-vessel volatilization of germanium tetra chloride before the determinations. The results, based on the data gathered over a period of one year, showed that the long-run performance of the method is good, and it can be used for routine analysis of impurity elements in high-purity germanium dioxide.
如今，高纯度锗化合物（如二氧化锗）被用于多种应用（如锗基探测器、半导体、光纤系统）。因此，必须开发出可靠的方法来常规测定锗化合物中的微量元素杂质。在本研究中，采用电感耦合等离子体质谱法、电感耦合等离子体发射光谱法和/或电热原子吸收光谱法测定二氧化锗中的15种杂质元素。在测定之前，通过简单的敞口容器挥发四氯化锗，消除/最小化了锗基体可能产生的干扰效应。基于一年期间收集的数据得出的结果表明，该方法的长期性能良好，可用于高纯度二氧化锗中杂质元素的常规分析。
