State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, 109 Deya Road, Changsha 410073, People's Republic of China.
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China.
Nanoscale Res Lett. 2014 Jul 28;9(1):367. doi: 10.1186/1556-276X-9-367. eCollection 2014.
Graphene is highly sensitive to environmental influences, and thus, it is worthwhile to deposit protective layers on graphene without impairing its excellent properties. Hexagonal boron nitride (h-BN), a well-known dielectric material, may afford the necessary protection. In this research, we demonstrated the van der Waals epitaxy of h-BN nanosheets on mechanically exfoliated graphene by chemical vapor deposition, using borazine as the precursor to h-BN. The h-BN nanosheets had a triangular morphology on a narrow graphene belt but a polygonal morphology on a larger graphene film. The h-BN nanosheets on graphene were highly crystalline, except for various in-plane lattice orientations. Interestingly, the h-BN nanosheets preferred to grow on graphene than on SiO2/Si under the chosen experimental conditions, and this selective growth spoke of potential promise for application to the preparation of graphene/h-BN superlattice structures fabricated on SiO2/Si.
石墨烯对环境影响非常敏感，因此，在不损害其优异性能的情况下，在石墨烯上沉积保护层是值得的。六方氮化硼（h-BN）是一种众所周知的介电材料，可能提供必要的保护。在这项研究中，我们通过化学气相沉积，使用苯并三嗪作为 h-BN 的前体，展示了 h-BN 纳米片在机械剥落的石墨烯上的范德华外延生长。h-BN 纳米片在较窄的石墨烯带中具有三角形形态，但在较大的石墨烯膜中具有多边形形态。除了各种面内晶格取向外，石墨烯上的 h-BN 纳米片具有高结晶性。有趣的是，在所选的实验条件下，h-BN 纳米片在石墨烯上的生长优先于在 SiO2/Si 上，这种选择性生长预示着在 SiO2/Si 上制备石墨烯/h-BN 超晶格结构的应用具有潜在的前景。
