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结几何中 skyrmion 和畴壁对之间的可逆转换。

A reversible conversion between a skyrmion and a domain-wall pair in a junction geometry.

机构信息

1] Department of Physics, University of Hong Kong, Hong Kong, P.R. China [2] Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, P.R. China.

Department of Applied Physics, University of Tokyo, Hongo 7-3-1, Tokyo 113-8656, Japan.

出版信息

Nat Commun. 2014 Aug 13;5:4652. doi: 10.1038/ncomms5652.

Abstract

Skyrmions are expected to be a key component of the next-generation of spintronics: known as 'skyrmionics'. On the other hand, there is a well-established memory device encoded by a sequence of domain walls. Here we show a conversion is possible between a skyrmion and a domain-wall pair by connecting wide and narrow nanowires, enabling the information transmission between a skyrmion device and a domain-wall device. Our results will be the basis of a hybrid device made of skyrmions and domain walls, where the encoded information in domain walls is converted into skyrmions, and then read out by converting the skyrmions back to domain walls after a functional control of the skyrmions. Such a device has the potential to outperform domain-wall racetrack memory because of the combined advantages of domain walls and skyrmions for spintronics application.

摘要

斯格明子有望成为下一代自旋电子学的关键组成部分

被称为“斯格明子学”。另一方面,有一种通过序列的畴壁编码的成熟的存储设备。在这里,我们通过连接宽纳米线和窄纳米线展示了一种在斯格明子和畴壁对之间进行转换的可能性,从而实现了斯格明子设备和畴壁设备之间的信息传输。我们的结果将为混合设备的设计提供基础,该混合设备由斯格明子和畴壁组成,其中畴壁中的编码信息被转换为斯格明子,然后通过在斯格明子上进行功能控制后,将斯格明子转换回畴壁,从而读出信息。由于斯格明子和畴壁在自旋电子学应用方面的优势相结合,这种设备具有超越畴壁赛道存储器的潜力。

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