Picard Y N, Liu M, Lammatao J, Kamaladasa R, De Graef M
Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, PA 15213-3890, USA.
Ultramicroscopy. 2014 Nov;146:71-8. doi: 10.1016/j.ultramic.2014.07.006. Epub 2014 Jul 31.
This paper describes the dynamical simulation of electron channeling contrast images (ECCIs) of dislocations. The approach utilizes both the Bloch wave formalism and the scattering matrix formalism to generate electron channeling patterns (ECPs). The latter formalism is then adapted to include the effect of lattice defects on the back-scattered electron yield, resulting in a computational algorithm for the simulation of ECCIs. Dislocations of known line direction and Burgers vector are imaged experimentally by ECCI and match well with simulated ECCIs for various channeling conditions. Experiment/simulation comparisons for ECPs and ECCIs are demonstrated for metals (Al), semiconductors (Si), and ceramics (SrTiO₃).
