St. Petersburg State University , 198504 St. Petersburg, Russia.
Nano Lett. 2014 Sep 10;14(9):4982-8. doi: 10.1021/nl501389h. Epub 2014 Aug 22.
Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material still remains an enigma. Here we demonstrate a method to handle N-impurities in graphene, which allows efficient conversion of pyridinic N to graphitic N and therefore precise tuning of the charge carrier concentration. By applying photoemission spectroscopy and density functional calculations, we show that the electron doping effect of graphitic N is strongly suppressed by pyridinic N. As the latter is converted into the graphitic configuration, the efficiency of doping rises up to half of electron charge per N atom.
许多人已经提出了将 N- 石墨烯应用于各种器件的实际应用的建议，如电池、传感器、超级电容器和下一代电子设备。然而，这种材料中氮缺陷的化学性质仍然是一个谜。在这里，我们展示了一种处理石墨烯中 N 杂质的方法，该方法允许将吡啶 N 高效转化为石墨 N，从而精确调整载流子浓度。通过应用光电子能谱和密度泛函计算，我们表明石墨 N 的电子掺杂效应受到吡啶 N 的强烈抑制。随着后者转化为石墨构型，掺杂效率上升到每个 N 原子半个电子电荷。
