氧化锌单丝忆阻器的单极性电阻开关。

Unipolar resistive switching of ZnO-single-wire memristors.

机构信息

Institute of Optoelectronics & Nanomaterials (ION), School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China ; Department of Fundamental Courses, Jinling Institute of Technology, Nanjing 211169, China.

Institute of Optoelectronics & Nanomaterials (ION), School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.

出版信息

Nanoscale Res Lett. 2014 Aug 7;9(1):381. doi: 10.1186/1556-276X-9-381. eCollection 2014.

DOI:10.1186/1556-276X-9-381

PMID:25147487

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4136945/

Abstract

Well unipolar resistive switching (RS) behaviors were observed from Ag/ZnO single-microwire/Ag memristors. The reset voltages were larger than the set voltages, and all of them were less than 1 V. The resistance ratios of high-resistance state (HRS) to low-resistance state (LRS) reached 10(3). The bistable RS behaviors were entirely reversible and steady within 100 cycles. It was found that the dominant conduction mechanisms in LRS and HRS were ohmic behavior and space-charge-limited current (SCLC), respectively.

摘要

Ag/ZnO 单根微米线/Ag 忆阻器表现出良好的单极性电阻转变（RS）行为。复位电压大于置位电压，均小于 1V。高阻态（HRS）与低阻态（LRS）的电阻比达到 10^3。双稳 RS 行为完全可逆，在 100 个循环内稳定。研究发现，LRS 和 HRS 中的主要传导机制分别为欧姆行为和空间电荷限制电流（SCLC）。