Xu F, Holmqvist C, Belzig W
Fachbereich Physik, Universität Konstanz, D-78457 Konstanz, Germany.
Phys Rev Lett. 2014 Aug 8;113(6):066801. doi: 10.1103/PhysRevLett.113.066801. Epub 2014 Aug 5.
Understanding tunneling from an atomically sharp tip to a metallic surface requires us to account for interactions on a nanoscopic scale. Inelastic tunneling of electrons generates emission of photons, whose energies intuitively should be limited by the applied bias voltage. However, experiments [G. Schull et al., Phys. Rev. Lett. 102, 057401 (2009) indicate that more complex processes involving the interaction of electrons with plasmon polaritons lead to photon emission characterized by overbias energies. We propose a model of this observation in analogy to the dynamical Coulomb blockade, originally developed for treating the electronic environment in mesoscopic circuits. We explain the experimental finding quantitatively by the correlated tunneling of two electrons interacting with a LRC circuit modeling the local plasmon-polariton mode. To explain the overbias emission, the non-Gaussian statistics of the tunneling dynamics of the electrons is essential.
理解从原子级尖锐的针尖到金属表面的隧穿现象,需要我们考虑纳米尺度上的相互作用。电子的非弹性隧穿会产生光子发射,直观上光子的能量应由施加的偏置电压限制。然而,实验[G. 舒尔等人,《物理评论快报》102, 057401 (2009)]表明,涉及电子与等离激元极化子相互作用的更复杂过程会导致以过偏置能量为特征的光子发射。我们提出了一个类似于动态库仑阻塞的该观测模型,动态库仑阻塞最初是为处理介观电路中的电子环境而开发的。我们通过两个与模拟局部等离激元 - 极化子模式的LRC电路相互作用的电子的关联隧穿,定量地解释了实验结果。为了解释过偏置发射,电子隧穿动力学的非高斯统计至关重要。