Martin Michael S, Theodore N David, Wei Chao-Chen, Shao Lin
Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843.
CHD-Fab, Freescale Semiconductor, Inc., Chandler, AZ 85224.
Sci Rep. 2014 Nov 7;4:6744. doi: 10.1038/srep06744.
Growth of thin crystals on external substrate surfaces by many different methods is a well-known technique, but its extension to inner, enclosed surfaces of large defects in monocrystalline materials has not yet been reported. The literature on thin film growth and defects in materials can be leveraged to fabricate new structures for a variety of applications. Here we show a physical process of nucleation and evolution of nanocrystalline silver inside voids in monocrystalline silicon. We found that the Ag growth is hetero-epitaxial using a coincident site lattice. Alignment of Ag and Si atomic planes is uniformly observed by high resolution transmission electron microscopy and macroscopically by channeling Rutherford backscattering spectrometry.
通过许多不同方法在外部衬底表面生长薄晶体是一种众所周知的技术，但将其扩展到单晶材料中大型缺陷的内部封闭表面尚未见报道。关于材料中薄膜生长和缺陷的文献可用于制造各种应用的新结构。在这里，我们展示了单晶硅中孔隙内纳米晶银的成核和演化的物理过程。我们发现银的生长是使用重合点阵的异质外延生长。通过高分辨率透射电子显微镜均匀地观察到银和硅原子平面的对齐，并且通过沟道卢瑟福背散射光谱法在宏观上也观察到了这种对齐。
