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利用光激活的异质溶胶-凝胶金属氧化物电介质和半导体实现高稳定性和不可感知的电子器件。

Highly stable and imperceptible electronics utilizing photoactivated heterogeneous sol-gel metal-oxide dielectrics and semiconductors.

机构信息

School of Electrical and Electronic Engineering, Chung-Ang University, Seoul, South Korea.

出版信息

Adv Mater. 2015 Feb 18;27(7):1182-8. doi: 10.1002/adma.201404296. Epub 2015 Jan 7.

DOI:10.1002/adma.201404296
PMID:25580710
Abstract

Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process.

摘要

Zr 的掺入会生成固有激活的 ZAO 表面，从而形成稳定的半导体 IGZO 薄膜和良好的界面特性。经过光化学退火的金属氧化物器件和电路，采用优化的溶胶-凝胶 ZAO 电介质和 IGZO 半导体层，展示了通过低温溶液工艺制造的柔性电子器件的高性能和电/机械稳定运行。

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