Yang Jiajie, Jo Jeong-Wan, Kim Yoonwoo, Jung Sung-Min, Lee Sanghyo, Kim Jong Min
Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K.
School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, South Korea.
ACS Appl Nano Mater. 2025 Mar 18;8(12):5961-5970. doi: 10.1021/acsanm.5c00068. eCollection 2025 Mar 28.
We report a fully addressable smart textile display using quantum dot light-emitting diodes (QD-LEDs) featuring a highly durable electrode. The key innovation lies in the development of an ultrathin oxide/metal hybrid structure for the durable electrode, which achieves mechanical bending durability surpassing the indium tin oxide (ITO) electrode. The optimized electrode, composed of MoO and Au, exhibits a transmittance of = 81%, while maintaining a sheet resistance of = 17.92, achieving a Figure of Merit (FoM) of 0.0077. The bending tests further demonstrate that the QD-LEDs with this electrode retain their luminance up to 6325 cd m after undergoing 500 bending cycles at a bending radius of 5 mm. Furthermore, this study introduces not only a highly mechanically robust device, but also an integration method for textile systems by employing an innovative lateral driving display system architecture enabling the precise addressing of individual QD-LEDs in a textile display.
我们报道了一种使用量子点发光二极管（QD-LED）的完全可寻址智能纺织品显示器，其具有高度耐用的电极。关键创新在于开发了一种用于耐用电极的超薄氧化物/金属混合结构，该结构实现了超过氧化铟锡（ITO）电极的机械弯曲耐久性。由MoO和Au组成的优化电极，在保持17.92的薄层电阻的同时，透射率为81%，品质因数（FoM）为0.0077。弯曲测试进一步表明，带有该电极的QD-LED在5mm弯曲半径下经过500次弯曲循环后，其亮度仍保持在6325 cd m。此外，本研究不仅引入了一种机械强度高的器件，还通过采用创新的横向驱动显示系统架构，介绍了一种用于纺织品系统的集成方法，该架构能够在纺织品显示器中精确寻址单个QD-LED。
