双固态栅 PbS 纳米晶场效应晶体管中陷阱态的高迁移率和低密度。
High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors.
机构信息
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands; Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
出版信息
Adv Mater. 2015 Mar 25;27(12):2107-12. doi: 10.1002/adma.201404495. Epub 2015 Feb 17.
Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm(2) V(-1) s(-1) ) and the high on/off ratio (10(5) -10(6) ), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.
采用 SiO2 和 Cytop 作为栅介质制作了双栅 PbS 纳米晶场效应晶体管。所获得的电子迁移率（0.2 cm(2) V(-1) s(-1) ）和高开关比（10(5) -10(6) ）表明，纳米晶的组装（通过自组装单层实现）以及陷阱密度的降低（使用 Cytop 作为介电材料）对于纳米晶的未来应用至关重要。
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