Sun Yihui, Yan Xiaoqin, Zheng Xin, Liu Yichong, Zhao Yanguang, Shen Yanwei, Liao Qingliang, Zhang Yue
†State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
‡Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
ACS Appl Mater Interfaces. 2015 Apr 8;7(13):7382-8. doi: 10.1021/acsami.5b01080. Epub 2015 Mar 27.
In this work, a high-performance, forming-free memristor based on Au/ZnO nanorods/AZO (Al-doped ZnO conductive glass) sandwich structure has been developed by rapid hydrogen annealing treatment. The Ron/Roff rate is dramatically increased from ∼10 to ∼10(4) after the surface treatment. Such an enhanced performance is attributed to the introduced oxygen vacancies layer at the top of ZnO nanorods. The device also exhibits excellent switching and retention stability. In addition, the carrier migration behavior can be well interpreted by classical trap-controlled space charge limited conduction, which verifies the forming of conductive filamentary in low resistive state. On this basis, Arrhenius activation theory is adopted to explain the drifting of oxygen vacancies, which is further confirmed by the time pertinence of resistive switching behavior under different sweep speed. This fabrication approach offers a useful approach to enhance the switching properties for next-generation memory applications.
在这项工作中，通过快速氢退火处理开发了一种基于Au/ZnO纳米棒/AZO（铝掺杂ZnO导电玻璃）三明治结构的高性能、无需形成过程的忆阻器。表面处理后，开/关比从约10急剧增加到约10⁴。这种性能增强归因于在ZnO纳米棒顶部引入的氧空位层。该器件还表现出优异的开关和保持稳定性。此外，载流子迁移行为可以通过经典的陷阱控制空间电荷限制传导得到很好的解释，这验证了低电阻状态下导电细丝的形成。在此基础上，采用阿伦尼乌斯活化理论来解释氧空位的漂移，这在不同扫描速度下电阻开关行为的时间相关性中得到了进一步证实。这种制造方法为增强下一代存储器应用的开关特性提供了一种有用的方法。
