Shen Chao, Ng Tien Khee, Ooi Boon S
Opt Express. 2015 Mar 23;23(6):7991-8. doi: 10.1364/OE.23.007991.
We report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process. This led to simultaneous realization of adjacent regions with peak emission of 2.74 eV and 2.82 eV with a high spatial resolution (~1 μm) at the coating boundary. The potential profile softening in the intermixed QW light-emitting diode (LED) was experimentally and numerically correlated, shedding light on the origin of alleviated efficiency droop from 30.5% to 16.6% (at 150 A/cm²). The technique is advantageous for fabricating high efficiency light-emitters, and is amenable to monolithic integration of nitride-based photonic devices.
我们报道了一种独特的区域选择性、生长后方法，该方法利用金属/介质涂层诱导的混合过程来设计氮化铟镓/氮化镓量子阱（QW）的量子限制势能分布。这导致在涂层边界处同时实现了发射峰值分别为2.74 eV和2.82 eV的相邻区域，且具有高空间分辨率（约1μm）。通过实验和数值方法关联了混合量子阱发光二极管（LED）中势能分布的软化现象，揭示了效率 droop 从30.5%降低到16.6%（在150 A/cm² 时）的原因。该技术有利于制造高效发光器，并且适用于基于氮化物的光子器件的单片集成。
