Li Guojian, Wang Huimin, Wang Qiang, Zhao Yue, Wang Zhen, Du Jiaojiao, Ma Yonghui
Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, No 3-11, Wenhua road, Heping district Shenyang, 110819 China.
Nanoscale Res Lett. 2015 Mar 7;10:112. doi: 10.1186/s11671-015-0834-2. eCollection 2015.
The effect of a high magnetic field applied during oxidation on the structure, optical transmittance, resistivity, and magnetism of cobalt (Co)-doped zinc oxide (ZnO) thin films prepared by oxidizing evaporated Zn/Co bilayer thin films in open air was studied. The relationship between the structure and properties of films oxidized with and without an applied magnetic field was analyzed. The results show that the high magnetic field obviously changed the structure and properties of the Co-doped ZnO films. The Lorentz force of the high magnetic field suppressed the oxidation growth on nanowhiskers. As a result, ZnO nanowires were formed without a magnetic field, whereas polyhedral particles formed under a 6 T magnetic field. This morphology variation from dendrite to polyhedron caused the transmittance below 1,200 nm of the film oxidized under a magnetic field of 6 T to be much lower than that of the film oxidized without a magnetic field. X-ray photoemission spectroscopy indicated that the high magnetic field suppressed Co substitution in the ZnO lattice, increased the concentration of oxygen vacancies, and changed the chemical state of Co. The increased concentration of oxygen vacancies affected the temperature dependence of the resistivity of the film oxidized under a magnetic field of 6 T compared with that of the film oxidized without a magnetic field. The changes of oxygen vacancy concentration and Co state caused by the application of the high magnetic field also increase the ferromagnetism of the film at room temperature. All of these results indicate that a high magnetic field is an effective tool to modify the structure and properties of ZnO thin films.
研究了在氧化过程中施加高磁场对通过在空气中氧化蒸发的Zn/Co双层薄膜制备的钴(Co)掺杂氧化锌(ZnO)薄膜的结构、光学透过率、电阻率和磁性的影响。分析了在有和没有施加磁场的情况下氧化的薄膜的结构与性能之间的关系。结果表明,高磁场明显改变了Co掺杂ZnO薄膜的结构和性能。高磁场的洛伦兹力抑制了纳米晶须上的氧化生长。结果,在没有磁场的情况下形成了ZnO纳米线,而在6T磁场下形成了多面体颗粒。这种从枝晶到多面体的形态变化导致在6T磁场下氧化的薄膜在1200nm以下的透过率远低于在没有磁场的情况下氧化的薄膜。X射线光电子能谱表明,高磁场抑制了Co在ZnO晶格中的取代,增加了氧空位的浓度,并改变了Co的化学状态。与在没有磁场的情况下氧化的薄膜相比,氧空位浓度的增加影响了在6T磁场下氧化的薄膜的电阻率对温度的依赖性。高磁场的施加引起的氧空位浓度和Co状态的变化也增加了薄膜在室温下的铁磁性。所有这些结果表明,高磁场是修饰ZnO薄膜结构和性能的有效工具。