Melcher Jordan L, Elassy Kareem S, Ordonez Richard C, Hayashi Cody, Ohta Aaron T, Garmire David
Department of Electrical Engineering, University of Hawaii at Manoa, Honolulu, HI 96822, USA.
Space and Naval Warfare Systems Center Pacific, Pearl City, HI 96782, USA.
Micromachines (Basel). 2019 Jan 14;10(1):54. doi: 10.3390/mi10010054.
Advancements in flexible circuit interconnects are critical for widespread adoption of flexible electronics. Non-toxic liquid-metals offer a viable solution for flexible electrodes due to deformability and low bulk resistivity. However, fabrication processes utilizing liquid-metals suffer from high complexity, low throughput, and significant production cost. Our team utilized an inexpensive spray-on stencil technique to deposit liquid-metal Galinstan electrodes in top-gated graphene field-effect transistors (GFETs). The electrode stencils were patterned using an automated vinyl cutter and positioned directly onto chemical vapor deposition (CVD) graphene transferred to polyethylene terephthalate (PET) substrates. Our spray-on method exhibited a throughput of 28 transistors in under five minutes on the same graphene sample, with a 96% yield for all devices down to a channel length of 50 μm. The fabricated transistors possess hole and electron mobilities of 663.5 cm²/(V·s) and 689.9 cm²/(V·s), respectively, and support a simple and effective method of developing high-yield flexible electronics.
柔性电路互连技术的进步对于柔性电子器件的广泛应用至关重要。无毒液态金属因其可变形性和低体电阻率，为柔性电极提供了一种可行的解决方案。然而，利用液态金属的制造工艺存在高复杂性、低产量和高昂的生产成本等问题。我们的团队采用了一种廉价的喷涂模板技术，在顶部栅极石墨烯场效应晶体管（GFET）中沉积液态金属镓铟锡合金电极。电极模板使用自动乙烯基切割机进行图案化，并直接放置在转移到聚对苯二甲酸乙二醇酯（PET）基板上的化学气相沉积（CVD）石墨烯上。我们的喷涂方法在不到五分钟的时间内，在同一石墨烯样品上实现了28个晶体管的产量，对于所有沟道长度低至50μm的器件，良品率达到96%。所制造的晶体管的空穴迁移率和电子迁移率分别为663.5 cm²/(V·s)和689.9 cm²/(V·s)，并支持一种简单有效的方法来开发高产率的柔性电子器件。
