Reyes-Martinez Marcos A, Crosby Alfred J, Briseno Alejandro L
Polymer Science and Engineering, University of Massachusetts Amherst, 120 Governor's Drive, Amherst, Massachusetts 01003, USA.
Nat Commun. 2015 May 5;6:6948. doi: 10.1038/ncomms7948.
With the impending surge of flexible organic electronic technologies, it has become essential to understand how mechanical deformation affects the electrical performance of organic thin-film devices. Organic single crystals are ideal for the systematic study of strain effects on electrical properties without being concerned about grain boundaries and other defects. Here we investigate how the deformation affects the field-effect mobility of single crystals of the benchmark semiconductor rubrene. The wrinkling instability is used to apply local strains of different magnitudes along the conducting channel in field-effect transistors. We discover that the mobility changes as dictated by the net strain at the dielectric/semiconductor interface. We propose a model based on the plate bending theory to quantify the net strain in wrinkled transistors and predict the change in mobility. These contributions represent a significant step forward in structure-function relationships in organic semiconductors, critical for the development of the next generation of flexible electronic devices.
随着柔性有机电子技术的迅速发展，了解机械变形如何影响有机薄膜器件的电学性能变得至关重要。有机单晶是系统研究应变对电学性能影响的理想材料，无需担心晶界和其他缺陷。在此，我们研究了变形如何影响基准半导体红荧烯单晶的场效应迁移率。利用褶皱不稳定性在场效应晶体管的导电沟道上施加不同大小的局部应变。我们发现迁移率的变化取决于介电/半导体界面处的净应变。我们提出了一个基于板弯曲理论的模型来量化褶皱晶体管中的净应变，并预测迁移率的变化。这些成果代表了有机半导体结构-功能关系方面的重大进展，这对下一代柔性电子器件的发展至关重要。
