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定制介电层结构以提高有机场效应晶体管的性能:夹心式极性介电层的应用

Tailoring the Dielectric Layer Structure for Enhanced Performance of Organic Field-Effect Transistors: The Use of a Sandwiched Polar Dielectric Layer.

作者信息

Han Shijiao, Yang Xin, Zhuang Xinming, Yu Junsheng, Li Lu

机构信息

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.

Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China.

出版信息

Materials (Basel). 2016 Jul 7;9(7):545. doi: 10.3390/ma9070545.

Abstract

To investigate the origins of hydroxyl groups in a polymeric dielectric and its applications in organic field-effect transistors (OFETs), a polar polymer layer was inserted between two polymethyl methacrylate (PMMA) dielectric layers, and its effect on the performance as an organic field-effect transistor (OFET) was studied. The OFETs with a sandwiched dielectric layer of poly(vinyl alcohol) (PVA) or poly(4-vinylphenol) (PVP) containing hydroxyl groups had shown enhanced characteristics compared to those with only PMMA layers. The field-effect mobility had been raised more than 10 times in -type devices (three times in the -type one), and the threshold voltage had been lowered almost eight times in -type devices (two times in the -type). The on-off ratio of two kinds of devices had been enhanced by almost two orders of magnitude. This was attributed to the orientation of hydroxyl groups from disordered to perpendicular to the substrate under gate-applied voltage bias, and additional charges would be induced by this polarization at the interface between the semiconductor and dielectrics, contributing to the accumulation of charge transfer.

摘要

为了研究聚合物电介质中羟基的起源及其在有机场效应晶体管(OFET)中的应用,在两个聚甲基丙烯酸甲酯(PMMA)电介质层之间插入了一个极性聚合物层,并研究了其对有机场效应晶体管(OFET)性能的影响。与仅具有PMMA层的OFET相比,具有夹在中间的含羟基的聚乙烯醇(PVA)或聚(4-乙烯基苯酚)(PVP)介电层的OFET表现出增强的特性。在p型器件中,场效应迁移率提高了10倍以上(在n型器件中提高了3倍),在p型器件中阈值电压降低了近8倍(在n型器件中降低了2倍)。两种器件的开/关比提高了近两个数量级。这归因于在栅极施加电压偏置下,羟基从无序到垂直于衬底的取向,并且这种极化会在半导体和电介质之间的界面处感应出额外的电荷,有助于电荷转移的积累。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d84e/5456942/febb0a3065bc/materials-09-00545-g001.jpg

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