Department of Chemistry, Tunghai University, Taichung City 40704, Taiwan.
Small. 2012 May 7;8(9):1384-91. doi: 10.1002/smll.201101927. Epub 2012 Feb 29.
To realize graphene-based electronics, bandgap opening of graphene has become one of the most important issues that urgently need to be addressed. Recent theoretical and experimental studies show that intentional doping of graphene with boron and nitrogen atoms is a promising route to open the bandgap, and the doped graphene might exhibit properties complementary to those of graphene and hexagonal boron nitride (h-BN), largely extending the applications of these materials in the areas of electronics and optics. This work demonstrates the conversion of graphene oxide nanosheets into boron carbonitride (BCN) nanosheets by reacting them with B(2) O(3) and ammonia at 900 to 1100 °C, by which the boron and nitrogen atoms are incorporated into the graphene lattice in randomly distributed BN nanodomains. The content of BN in BN-doped graphene nanosheets can be tuned by changing the reaction temperature, which in turn affects the optical bandgap of these nanosheets. Electrical measurements show that the BN-doped graphene nanosheet exhibits an ambipolar semiconductor behavior and the electrical bandgap is estimated to be ≈25.8 meV. This study provides a novel and simple route to synthesize BN-doped graphene nanosheets that may be useful for various optoelectronic applications.
为了实现基于石墨烯的电子学，打开石墨烯的能隙成为最需要解决的重要问题之一。最近的理论和实验研究表明，用硼和氮原子有目的地掺杂石墨烯是打开带隙的一种很有前途的途径，掺杂石墨烯可能表现出与石墨烯和六方氮化硼（h-BN）互补的性质，从而大大扩展了这些材料在电子学和光学领域的应用。这项工作展示了通过在 900 到 1100°C 下用 B(2)O(3)和氨气与氧化石墨烯纳米片反应，将氧化石墨烯纳米片转化为硼碳氮（BCN）纳米片，其中硼和氮原子以随机分布的 BN 纳米区的形式掺入石墨烯晶格中。通过改变反应温度可以调节 BN 掺杂石墨烯纳米片中 BN 的含量，进而影响这些纳米片的光学带隙。电学测量表明，BN 掺杂石墨烯纳米片表现出双极性半导体行为，电带隙估计约为 25.8 meV。这项研究提供了一种合成 BN 掺杂石墨烯纳米片的新的简单途径，可能对各种光电应用有用。
