石墨烯-氧化锌纳米线肖特基二极管的栅极调制

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.

作者信息

Liu Ren, You Xu-Chen, Fu Xue-Wen, Lin Fang, Meng Jie, Yu Da-Peng, Liao Zhi-Min

机构信息

State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China.

1] State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China [2] Collaborative Innovation Center of Quantum Matter, Beijing, China.

出版信息

Sci Rep. 2015 May 6;5:10125. doi: 10.1038/srep10125.

DOI:10.1038/srep10125

PMID:25944683

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4421871/

Abstract

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

摘要

石墨烯 - 半导体界面对于电子和光电器件中的应用至关重要。在此，我们报告了通过栅极电压（Vg）对石墨烯/氧化锌纳米线肖特基二极管的电输运特性进行调制。在没有外部Vg的情况下，石墨烯/氧化锌纳米线肖特基二极管的理想因子约为1.7，肖特基势垒高度约为0.28 eV。由于石墨烯费米能级的变化，肖特基势垒高度对Vg敏感。当Vg向负值扫描时，势垒高度迅速增加，而向正值Vg扫描时则缓慢降低。我们的结果有助于理解石墨烯 - 半导体肖特基二极管中电输运的基本机制。