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二维材料中的原子缺陷。

Atomic Defects in Two Dimensional Materials.

机构信息

Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA.

Materials Science Division, Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA, 94720, USA.

出版信息

Adv Mater. 2015 Oct 14;27(38):5771-7. doi: 10.1002/adma.201500231. Epub 2015 May 6.

Abstract

Atomic defects in crystalline structures have pronounced affects on their bulk properties. Aberration-corrected transmission electron microscopy has proved to be a powerful characterization tool for understanding the bonding structure of defects in materials. In this article, recent results on the characterization of defect structures in two dimensional materials are discussed. The dynamic behavior of defects in graphene shows the stability of zigzag edges of the material and gives insights into the dislocation motion. Polycrystalline graphene is characterized using advanced electron microscopy techniques, revealing the global crystal structure of the material, as well as atomic-resolution observation of the carbon atom positions between neighboring crystal grains. Studies of hexagonal boron nitride (hBN) are also visited, highlighting the interlayer bonding, which occurs upon defect formation, and characterization of grain boundary structures. Lastly, defect structures in monolayer polycrystalline transition metal dichalcogenides grown by CVD are discussed.

摘要

晶体结构中的原子缺陷对其体性质有显著影响。像像差校正的透射电子显微镜已经被证明是一种用于理解材料中缺陷键合结构的强有力的表征工具。本文讨论了二维材料中缺陷结构的最新研究成果。在石墨烯中的缺陷的动态行为显示了材料的锯齿边缘的稳定性,并深入了解了位错运动。使用先进的电子显微镜技术对多晶石墨烯进行了表征,揭示了材料的整体晶体结构,以及相邻晶粒之间的碳原子位置的原子分辨率观察。还研究了六方氮化硼(hBN),突出了缺陷形成时的层间键合以及晶界结构的表征。最后,讨论了 CVD 生长的单层多晶过渡金属二卤化物中的缺陷结构。

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