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双层 WSe2 中的电荷诱导二次谐波产生。

Charge-Induced Second-Harmonic Generation in Bilayer WSe2.

机构信息

†Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore.

‡Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States.

出版信息

Nano Lett. 2015 Aug 12;15(8):5653-7. doi: 10.1021/acs.nanolett.5b02547. Epub 2015 Jul 28.

Abstract

Controlling nonlinear light-matter interaction is important from a fundamental science point of view as well as a basis for future optoelectronic devices. Recent advances in two-dimensional crystals have created opportunities to manipulate nonlinear processes electrically. Here we report a strong second-harmonic generation (SHG) in a 2D WSe2 bilayer crystal caused by a back gate field. This unusual process takes place only when the gate polarity causes charge accumulation rather than depletion. Analysis based on a bond-charge model traces the origin of SHG to the nonuniform field distribution within a single monolayer, caused by the accumulated submonolayer screening charge in the tungsten plane. We name this phenomenon charge-induced SHG (CHISHG), which is fundamentally different from the field- or current-induced SHG. Our findings provide a potentially valuable technique for understanding and noninvasive probing of charge and current distributions in future low dimensional electronic devices.

摘要

从基础科学的角度以及未来光电器件的基础来看,控制非线性光物质相互作用非常重要。二维晶体的最新进展为电操控非线性过程创造了机会。在这里,我们报道了由背栅场引起的二维 WSe2 双层晶体中的强二次谐波产生(SHG)。这种不寻常的过程仅在栅极极性导致电荷积累而不是耗尽时发生。基于键电荷模型的分析追踪到 SHG 的起源是单层内的非均匀场分布,这是由钨平面中累积的亚单层屏蔽电荷引起的。我们将这种现象称为电荷诱导的 SHG(CHISHG),它与场或电流诱导的 SHG 有根本的不同。我们的发现为理解和非侵入性探测未来低维电子器件中的电荷和电流分布提供了一种潜在的有价值的技术。

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