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石墨烯超晶格中的拓扑布洛赫能带。

Topological Bloch bands in graphene superlattices.

作者信息

Song Justin C W, Samutpraphoot Polnop, Levitov Leonid S

机构信息

Walter Burke Institute for Theoretical Physics, California Institute of Technology, CA 91125; Institute for Quantum Information and Matter, and Department of Physics, California Institute of Technology, CA 91125; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139

Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139.

出版信息

Proc Natl Acad Sci U S A. 2015 Sep 1;112(35):10879-83. doi: 10.1073/pnas.1424760112. Epub 2015 Aug 18.

Abstract

We outline a designer approach to endow widely available plain materials with topological properties by stacking them atop other nontopological materials. The approach is illustrated with a model system comprising graphene stacked atop hexagonal boron nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley Hall effect and long-range chargeless valley currents. The nonlocal electrical response mediated by such currents provides diagnostics for band topology.

摘要

我们概述了一种设计方法,通过将广泛可用的普通材料堆叠在其他非拓扑材料之上,赋予其拓扑性质。该方法通过一个由堆叠在六方氮化硼之上的石墨烯组成的模型系统进行说明。在这种情况下,电子布洛赫带的贝里曲率对堆叠构型高度敏感。因此,电子拓扑可以通过晶体轴对齐来控制,为设计拓扑材料提供了一条实用途径。贝里曲率通过谷霍尔效应和长程无电荷谷电流在输运中表现出来。由这种电流介导的非局部电响应为能带拓扑提供了诊断方法。

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本文引用的文献

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Topological Valley Currents in Gapped Dirac Materials.带隙狄拉克材料中的拓扑谷电流
Phys Rev Lett. 2015 Jun 26;114(25):256601. doi: 10.1103/PhysRevLett.114.256601. Epub 2015 Jun 24.
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Electron interactions and gap opening in graphene superlattices.石墨烯超晶格中的电子相互作用和能隙打开。
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Phys Rev Lett. 2011 Apr 29;106(17):175301. doi: 10.1103/PhysRevLett.106.175301. Epub 2011 Apr 25.
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Single-layer behavior and its breakdown in twisted graphene layers.扭曲双层石墨烯中的单层行为及其失效。
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Band structure and gaps of triangular graphene superlattices.三角形石墨烯超晶格的能带结构和能隙。
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Boron nitride substrates for high-quality graphene electronics.氮化硼衬底用于高质量石墨烯电子学。
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