增强的分子间电荷转移诱导存储器件的多级电导开关。
Multilevel conductance switching of a memory device induced by enhanced intermolecular charge transfer.
机构信息
College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China.
Functional Nano and Soft Materials Laboratory (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, China.
出版信息
Adv Mater. 2015 Oct 21;27(39):5968-73. doi: 10.1002/adma.201502274. Epub 2015 Aug 28.
The modification of the terminal electron-donating groups induces a critical change in molecular aggregation and the intermolecular charge-transfer effect of the symmetric D-A1-A2-A1-D molecules that correlate with an addressable variation of memory performance from binary to ternary.
末端电子供体基团的修饰会引起对称 D-A1-A2-A1-D 分子的分子聚集和分子间电荷转移效应的关键变化，这与从二进制到三进制的可寻址记忆性能变化相关。
Zotero 插件