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GeV电子束自截断电离注入的演示。

Demonstration of self-truncated ionization injection for GeV electron beams.

作者信息

Mirzaie M, Li S, Zeng M, Hafz N A M, Chen M, Li G Y, Zhu Q J, Liao H, Sokollik T, Liu F, Ma Y Y, Chen L M, Sheng Z M, Zhang J

机构信息

Key Laboratory for Laser Plasmas (MOE) and Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China.

IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai 200240, China.

出版信息

Sci Rep. 2015 Oct 1;5:14659. doi: 10.1038/srep14659.

Abstract

Ionization-induced injection mechanism was introduced in 2010 to reduce the laser intensity threshold for controllable electron trapping in laser wakefield accelerators (LWFA). However, usually it generates electron beams with continuous energy spectra. Subsequently, a dual-stage target separating the injection and acceleration processes was regarded as essential to achieve narrow energy-spread electron beams by ionization injection. Recently, we numerically proposed a self-truncation scenario of the ionization injection process based upon overshooting of the laser-focusing in plasma which can reduce the electron injection length down to a few hundred micrometers, leading to accelerated beams with extremely low energy-spread in a single-stage. Here, using 100 TW-class laser pulses we report experimental observations of this injection scenario in centimeter-long plasma leading to the generation of narrow energy-spread GeV electron beams, demonstrating its robustness and scalability. Compared with the self-injection and dual-stage schemes, the self-truncated ionization injection generates higher-quality electron beams at lower intensities and densities, and is therefore promising for practical applications.

摘要

2010年引入了电离诱导注入机制,以降低激光尾场加速器(LWFA)中可控电子俘获的激光强度阈值。然而,它通常会产生具有连续能谱的电子束。随后,将注入和加速过程分开的双级靶被认为是通过电离注入获得窄能散电子束的关键。最近,我们通过数值方法提出了一种基于等离子体中激光聚焦过冲的电离注入过程的自截断方案,该方案可以将电子注入长度缩短至几百微米,从而在单级中产生能散极低的加速束。在此,我们使用100太瓦级的激光脉冲,报告了在厘米长的等离子体中对这种注入方案的实验观察结果,该结果导致产生了窄能散的GeV电子束,证明了其稳健性和可扩展性。与自注入和双级方案相比,自截断电离注入在更低的强度和密度下产生更高质量的电子束,因此在实际应用中具有广阔前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dd02/4589762/f7f5b6c53702/srep14659-f1.jpg

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