Tan Zhiyuan, Shi Wenjia, Guo Chungang, Zhang Quan, Yang Liang, Wu Xiaoling, Cheng Guo-An, Zheng Ruiting
Key Laboratory of Radiation Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.
Nanoscale. 2015 Nov 7;7(41):17268-73. doi: 10.1039/c5nr02876k.
Uniform dispersion of Au-Ag alloy nanoparticles underneath the surface of a Si wafer is realized via Au film pre-deposition and Ag ion implantation. The Au-Ag nanoparticles are used as catalysts in metal assisted chemical etching for fabricating Si nanowire arrays with average diameters of less than 10 nm. We find that the alloy catalysts introduced by ion implantation are the key to obtaining thin nanowire arrays and we also demonstrate that SiNWAs with various diameters could be simply produced by changing the thickness of the pre-deposited Au layer. Compared with the traditional process, ion beam assisted chemical etching is proven to be a convenient and efficient approach to fabricate ultra-thin SiNWAs on a large scale.
通过预先沉积金膜和银离子注入，实现了金 - 银合金纳米颗粒在硅片表面下的均匀分散。金 - 银纳米颗粒被用作金属辅助化学蚀刻中的催化剂，用于制造平均直径小于10纳米的硅纳米线阵列。我们发现，通过离子注入引入的合金催化剂是获得细纳米线阵列的关键，并且我们还证明，通过改变预先沉积的金层的厚度，可以简单地生产出各种直径的硅纳米线阵列。与传统工艺相比，离子束辅助化学蚀刻被证明是一种大规模制造超薄硅纳米线阵列的便捷有效方法。
