室温氧化物沉积法制备全透明氧化物薄膜晶体管。
Room Temperature Oxide Deposition Approach to Fully Transparent, All-Oxide Thin-Film Transistors.
机构信息
Electrical Engineering and Computer Sciences Department, University of California, Berkeley, CA, 94720, USA.
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
出版信息
Adv Mater. 2015 Oct 28;27(40):6090-5. doi: 10.1002/adma.201502159. Epub 2015 Sep 10.
A room temperature cathodic arc deposition technique is used to produce high-mobility ZnO thin films for low voltage thin-film transistors (TFTs) and digital logic inverters. All-oxide, fully transparent devices are fabricated on alkali-free glass and flexible polyimide foil, exhibiting high performance. This provides a practical materials platform for the low-temperature fabrication of all-oxide TFTs on virtually any substrate.
采用室温阴极电弧沉积技术制备了用于低压薄膜晶体管 (TFT) 和数字逻辑反相器的高迁移率 ZnO 薄膜。在无碱玻璃和柔性聚酰亚胺箔上制造了全氧化物、完全透明的器件，表现出了优异的性能。这为在几乎任何衬底上低温制造全氧化物 TFT 提供了实用的材料平台。
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