Yao Rihui, Zheng Zeke, Zeng Yong, Liu Xianzhe, Ning Honglong, Hu Shiben, Tao Ruiqiang, Chen Jianqiu, Cai Wei, Xu Miao, Wang Lei, Lan Linfeng, Peng Junbiao
State Key Laboratory of Luminescent Materialsand Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Materials (Basel). 2017 Feb 23;10(3):222. doi: 10.3390/ma10030222.
Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al₂O₃) insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO) conductive layer, as one AZO/Al₂O₃ heterojunction unit. The measurements of transmittance electronic microscopy (TEM) and X-ray reflectivity (XRR) revealed the smooth interfaces between ~2.2-nm-thick Al₂O₃ layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd) and pure Al, with Al₂O₃/AZO multilayered channel and AlO:Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al₂O₃/AZO heterojunction units exhibited a mobility of 2.47 cm²/V·s and an / ratio of 10⁶. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials.
本文研究了具有多导体/绝缘体纳米异质结的底栅全铝薄膜晶体管。在铝掺杂氧化锌（AZO）导电层表面沉积氧化铝（Al₂O₃）绝缘层，作为一个AZO/Al₂O₃异质结单元。透射电子显微镜（TEM）和X射线反射率（XRR）测量结果表明，厚度约为2.2nm的Al₂O₃层与厚度约为2.7nm的AZO层之间的界面光滑。这些器件完全由含铝材料组成，即其栅极和源极/漏极分别由铝钕合金（Al:Nd）和纯铝制成，具有Al₂O₃/AZO多层沟道和AlO:Nd栅极介电层。结果，具有两个Al₂O₃/AZO异质结单元的全铝薄膜晶体管表现出2.47cm²/V·s的迁移率和10⁶的/比。所有工艺均在室温下进行，这通过允许在类塑料基板或纸张上制造器件，主要使用无毒/稀有材料，为绿色显示产业创造了新的可能性。
