Lüssem Björn, Günther Alrun, Fischer Axel, Kasemann Daniel, Leo Karl
Department of Physics, Kent State University, Kent, OH 44242, USA.
J Phys Condens Matter. 2015 Nov 11;27(44):443003. doi: 10.1088/0953-8984/27/44/443003. Epub 2015 Oct 14.
Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.
诸如场效应晶体管（OFET）之类的有机开关器件是未来柔性电子设备的关键元件。然而，到目前为止，尚未实现商业突破，因为这些器件通常在开关速度（例如用于逻辑应用）和电流密度（例如用于显示像素驱动）方面存在不足。性能受限是由相对较低的电荷载流子迁移率以及低成本结构化需求导致的大沟道长度共同造成的。垂直有机晶体管是一种具有克服OFET这些局限性潜力的新技术。垂直有机晶体管能够在不采用成本高昂的结构化技术的情况下，将有机晶体管的沟道长度缩小至100纳米范围。文献中已经提出了几种不同的方法，这些方法即使在没有亚微米结构化技术的情况下，也能显示出高输出电流、低工作电压和相对较高的速度。在这篇综述中，将对这些不同的方法进行比较，并突出近期的进展。
