National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Adv Mater. 2015 Dec 16;27(47):7881-7. doi: 10.1002/adma.201503864. Epub 2015 Oct 26.
An ultrathin HfS2 -based ultrasensitive phototransistor is systematically studied. Au-contacted HfS2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 10(7) , ultrahigh photoresponsivity over 890 A W(-1) , and photogain over 2300. Moreover, the response time is strongly dependent on the back-gate voltage and shows a reverse trend for Au and Cr metals.
系统地研究了基于超薄 HfS2 的超高灵敏度光电晶体管。具有理想厚度为 7 至 12nm 的 Au 接触 HfS2 光电晶体管具有约 10（7）的高开关比、超过 890A W（-1）的超高光响应率和超过 2300 的光增益。此外，响应时间强烈依赖于背栅电压，对于 Au 和 Cr 金属表现出相反的趋势。
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