Huang Haiyun, Wang Dejun, Xu Yue
School of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, China.
Institute of New Electron Devices, Hangzhou Dianzi University, Hangzhou 310018, China.
Sensors (Basel). 2015 Oct 27;15(10):27359-73. doi: 10.3390/s151027359.
This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.
本文介绍了一种采用0.8μm高压互补金属氧化物半导体（CMOS）技术的全集成线性霍尔传感器。该单片霍尔传感器芯片具有高灵敏度的水平开关霍尔板和采用动态失调消除技术的高效信号调理器。改进的十字形霍尔板实现了高磁灵敏度和低失调。一种新型的旋转电流调制器稳定了静态输出电压并提高了信号调理器的可靠性。测试结果表明，在5V电源电压下，单片霍尔传感器微系统的最大霍尔输出电压高达±2.1V，在±5mT至±175mT的磁通密度范围内，霍尔输出电压的线性度高于99%。输出等效残余失调为0.48mT，静态功耗为20mW。
