采用标准 180nmCMOS 技术的三轴磁传感器的制造与特性分析。

Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology.

机构信息

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan.

Department of Biomedical Engineering, National Taiwan University, Taipei 106, Taiwan.

出版信息

Sensors (Basel). 2021 Oct 20;21(21):6953. doi: 10.3390/s21216953.

DOI:10.3390/s21216953

PMID:34770260

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8587165/

Abstract

A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed by an x-MSE and an y-MSE that are respectively employed to detect in the x- and y-direction magnetic field (MF). The z-MSE is used to sense in the z-direction MF. The x/y-MSE, which is constructed by two magnetotransistors, designs four additional collectors that are employed to increase the sensing current and to enhance the sensitivity of the MS. The Sentaurus TCAD software simulates the characteristic of the MS. The measured results reveal that the MS sensitivity is 534 mV/T in the x-direction MF, 525 mV/T in the y-direction MF and 119 mV/T in the z-axis MF.

摘要

基于标准 180nm 互补金属氧化物半导体（CMOS）技术，开发了一种三轴微磁传感器（MS）。MS 设计了两个磁敏元件（MSE），包括 x/y-MSE 和 z-MSE，以降低交叉灵敏度。x/y-MSE 由 x-MSE 和 y-MSE 构成，分别用于检测 x 方向和 y 方向的磁场（MF）。z-MSE 用于检测 z 方向的 MF。x/y-MSE 由两个磁晶体管构成，设计了四个额外的集电极，用于增加感测电流并提高 MS 的灵敏度。Sentaurus TCAD 软件模拟了 MS 的特性。测量结果表明，MS 在 x 方向 MF 的灵敏度为 534 mV/T，在 y 方向 MF 的灵敏度为 525 mV/T，在 z 轴 MF 的灵敏度为 119 mV/T。