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一种具有低失调的CMOS垂直霍尔传感器的新设计。

A New Design of a CMOS Vertical Hall Sensor with a Low Offset.

作者信息

Lyu Fei, Huang Shuo, Wu Chaoran, Liang Xingcheng, Zhang Pengzhan, Wang Yuxuan, Pan Hongbing, Wang Yu

机构信息

School of Electronics and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China.

School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China.

出版信息

Sensors (Basel). 2022 Jul 31;22(15):5734. doi: 10.3390/s22155734.

DOI:10.3390/s22155734
PMID:35957290
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9371000/
Abstract

Vertical Hall sensors (VHSs), compatible with complementary metal oxide semiconductor (CMOS) technology, are used to detect magnetic fields in the plane of the sensor. In previous studies, their performance was limited by a large offset. This paper reports on a novel CMOS seven-contact VHS (7CVHS), which is formed by adding two additional contacts to a traditional five-contact VHS (5CVHS) to alleviate the offset. The offset voltage and offset magnetic field of the 7CVHS are reduced by 90.20% and 88.31% of those of the 5CVHS, respectively, with a 16.16% current-related sensitivity loss. Moreover, the size and positions of the contacts are optimized in standard GLOBALFOUNDRIES 0.18 μm BCDlite technology by scanning parameters using FEM simulations. The simulation data are analyzed in groups to study the influence of the size and contact positions on the current-related sensitivity, offset voltage, and offset magnetic field.

摘要

垂直霍尔传感器(VHS)与互补金属氧化物半导体(CMOS)技术兼容,用于检测传感器平面内的磁场。在先前的研究中,其性能受到较大失调的限制。本文报道了一种新型的CMOS七触点VHS(7CVHS),它是通过在传统的五触点VHS(5CVHS)上增加两个额外的触点来减轻失调。7CVHS的失调电压和失调磁场分别比5CVHS降低了90.20%和88.31%,电流相关灵敏度损失为16.16%。此外,在标准的格芯0.18μm BCDlite技术中,通过使用有限元模拟扫描参数,对触点的尺寸和位置进行了优化。对模拟数据进行分组分析,以研究尺寸和触点位置对电流相关灵敏度、失调电压和失调磁场的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/4739111b8b84/sensors-22-05734-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/2e1bc4493afb/sensors-22-05734-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/c36daa7bf3cf/sensors-22-05734-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/d75a9bbc9347/sensors-22-05734-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/1b9f8458e706/sensors-22-05734-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/b797f455b004/sensors-22-05734-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/62135fce2d09/sensors-22-05734-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/1db7a3d2e609/sensors-22-05734-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/4739111b8b84/sensors-22-05734-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/2e1bc4493afb/sensors-22-05734-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/c36daa7bf3cf/sensors-22-05734-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/d75a9bbc9347/sensors-22-05734-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/1b9f8458e706/sensors-22-05734-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/b797f455b004/sensors-22-05734-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/62135fce2d09/sensors-22-05734-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/1db7a3d2e609/sensors-22-05734-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b87/9371000/4739111b8b84/sensors-22-05734-g008.jpg

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本文引用的文献

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Sensors (Basel). 2016 Apr 7;16(4):491. doi: 10.3390/s16040491.
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Performance comparison of cross-like Hall plates with different covering layers.具有不同覆盖层的十字形霍尔板的性能比较。
Sensors (Basel). 2014 Dec 31;15(1):672-86. doi: 10.3390/s150100672.
3
A 256 pixel magnetoresistive biosensor microarray in 0.18μm CMOS.一款采用0.18μm互补金属氧化物半导体(CMOS)工艺的256像素磁阻生物传感器微阵列。
IEEE J Solid-State Circuits. 2013 May;48(5):1290-1301. doi: 10.1109/JSSC.2013.2245058.