Crescentini Marco, Biondi Michele, Romani Aldo, Tartagni Marco, Sangiorgi Enrico
Department of Electrical, Electronic and Information Engineering "G. Marconi"-DEI, University of Bologna, Cesena Campus, Via Venezia 52, 47521 Cesena, Italy.
Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Cesena Campus, Via Venezia 52, 47521 Cesena, Italy.
Sensors (Basel). 2017 Apr 4;17(4):765. doi: 10.3390/s17040765.
This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since this is the most general geometry leading to shape-independent results. The devices are analyzed by means of 3D-TCAD simulations embedding galvanomagnetic transport model, which takes into account the Lorentz force acting on carriers due to a magnetic field. Simulation results define a set of trade-offs and design rules that can be used by electronic designers to conceive their own Hall probes.
本手稿分析了诸如纵横比、掺杂浓度和偏置等设计参数对通用CMOS霍尔传感器性能的影响，并深入探讨了与电流相关的灵敏度、功耗和带宽。本文重点关注矩形霍尔探头，因为这是最通用的几何形状，能得出与形状无关的结果。通过嵌入电磁输运模型的3D-TCAD模拟对器件进行分析，该模型考虑了磁场作用在载流子上的洛伦兹力。模拟结果定义了一组权衡和设计规则，电子设计师可利用这些规则来构思自己的霍尔探头。
