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通过化学气相沉积法在铜上实现石墨烯从毫米级单层到多层的可控生长。

Controllable Growth of the Graphene from Millimeter-Sized Monolayer to Multilayer on Cu by Chemical Vapor Deposition.

作者信息

Liu Jinyang, Huang Zhigao, Lai Fachun, Lin Limei, Xu Yangyang, Zuo Chuandong, Zheng Weifeng, Qu Yan

机构信息

College of Physics and Energy, Fujian Normal University, Fuzhou, 350117, People's Republic China.

Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, People's Republic China.

出版信息

Nanoscale Res Lett. 2015 Dec;10(1):455. doi: 10.1186/s11671-015-1164-0. Epub 2015 Nov 26.

DOI:10.1186/s11671-015-1164-0
PMID:26612469
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4661165/
Abstract

As is well established, mastery to precise control of the layer number, stacking order of graphene, and the size of single-crystal monolayer graphene is very important for both fundamental interest and practical applications. In this report, millimeter-sized single-crystal monolayer graphene has been synthesized to multilayer graphene on Cu by chemical vapor deposition. The relationship of the growth process between monolayer graphene and multilayer graphene is investigated carefully. Besides the general multilayer graphene with Bernal stacking order, parts of multilayer graphene with non-Bernal stacking order were modulated under optimized growth conditions. The oxide nanoparticle on the Cu surface derived from annealing has been found to play the key role in nucleation. In addition, the hydrogen concentration impacts significantly on the layer number and shape of the graphene. Moreover, a possible mechanism was proposed to understand the growth process discussed above, which may provide an instruction to graphene growth on Cu by chemical vapor deposition.

摘要

众所周知,精确控制石墨烯的层数、堆叠顺序以及单晶单层石墨烯的尺寸,对于基础研究和实际应用都非常重要。在本报告中,通过化学气相沉积法在铜上合成了毫米级的单晶单层石墨烯至多层石墨烯。仔细研究了单层石墨烯和多层石墨烯生长过程之间的关系。除了具有伯纳尔堆叠顺序的普通多层石墨烯外,部分具有非伯纳尔堆叠顺序的多层石墨烯在优化的生长条件下得到了调控。发现铜表面经退火产生的氧化物纳米颗粒在成核过程中起关键作用。此外,氢浓度对石墨烯的层数和形状有显著影响。此外,还提出了一种可能的机制来理解上述生长过程,这可能为通过化学气相沉积法在铜上生长石墨烯提供指导。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eaa0/4661165/9e5af7d946bd/11671_2015_1164_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eaa0/4661165/e19806126dd8/11671_2015_1164_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eaa0/4661165/99bf0169a209/11671_2015_1164_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eaa0/4661165/ee5dccf50353/11671_2015_1164_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eaa0/4661165/9e5af7d946bd/11671_2015_1164_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eaa0/4661165/e19806126dd8/11671_2015_1164_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eaa0/4661165/99bf0169a209/11671_2015_1164_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eaa0/4661165/ee5dccf50353/11671_2015_1164_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eaa0/4661165/9e5af7d946bd/11671_2015_1164_Fig4_HTML.jpg

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The role of surface oxygen in the growth of large single-crystal graphene on copper.表面氧在铜上生长大单晶石墨烯中的作用。
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Turning off hydrogen to realize seeded growth of subcentimeter single-crystal graphene grains on copper.
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Millimeter-size single-crystal graphene by suppressing evaporative loss of Cu during low pressure chemical vapor deposition.毫米级单晶石墨烯的低压化学气相沉积中通过抑制铜的蒸发损失。
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