Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712, United States of America.
Nanotechnology. 2019 Jun 7;30(23):235602. doi: 10.1088/1361-6528/ab0847. Epub 2019 Feb 19.
Monolayer graphene is commonly grown on Cu substrates due to the self-limiting nature of graphene synthesis by chemical vapor deposition (CVD). Consequently, the growth of multilayer graphene by CVD has proven to be relatively difficult. This study demonstrates that the number of layers in graphene synthesized on a copper substrate can be precisely set by controlling the partial pressure of hydrogen gas used in the CVD process. This study also shows that a pressure threshold exists for a distinct transition from monolayer to multilayer graphene growth. This threshold is shown to be the boundary where the graphene growth process on Cu by CVD is no longer a self-limiting process. In addition, the multilayer graphene synthesized through the pressure control method forms in the Volmer-Weber mode with an AB stacking structure.
单层石墨烯通常在 Cu 衬底上生长，这是由于化学气相沉积（CVD）合成石墨烯的自限制性质。因此，通过 CVD 生长多层石墨烯已被证明相对困难。本研究表明，通过控制 CVD 过程中使用的氢气分压，可以精确设定在铜衬底上合成的石墨烯的层数。本研究还表明，存在一个压力阈值，用于从单层到多层石墨烯生长的明显转变。该阈值表明，CVD 条件下 Cu 上的石墨烯生长过程不再是自限制过程。此外，通过压力控制方法合成的多层石墨烯以 AB 堆叠结构的 Volmer-Weber 模式形成。
