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在有孔硅中同时进行热电器件性能测量和非相干声子输运。

Simultaneous Thermoelectric Property Measurement and Incoherent Phonon Transport in Holey Silicon.

机构信息

Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.

Department of Chemical and Biological Engineering and Center for Materials for Information Technology, University of Alabama , Tuscaloosa, Alabama 35487, United States.

出版信息

ACS Nano. 2016 Jan 26;10(1):124-32. doi: 10.1021/acsnano.5b05385. Epub 2015 Dec 9.

Abstract

Block copolymer patterned holey silicon (HS) was successfully integrated into a microdevice for simultaneous measurements of Seebeck coefficient, electrical conductivity, and thermal conductivity of the same HS microribbon. These fully integrated HS microdevices provided excellent platforms for the systematic investigation of thermoelectric transport properties tailored by the dimensions of the periodic hole array, that is, neck and pitch size, and the doping concentrations. Specifically, thermoelectric transport properties of HS with a neck size in the range of 16-34 nm and a fixed pitch size of 60 nm were characterized, and a clear neck size dependency was shown in the doping range of 3.1 × 10(18) to 6.5 × 10(19) cm(-3). At 300 K, thermal conductivity as low as 1.8 ± 0.2 W/mK was found in HS with a neck size of 16 nm, while optimized zT values were shown in HS with a neck size of 24 nm. The controllable effects of holey array dimensions and doping concentrations on HS thermoelectric performance could aid in improving the understanding of the phonon scattering process in a holey structure and also in facilitating the development of silicon-based thermoelectric devices.

摘要

嵌段共聚物图案化的硅孔(HS)成功集成到微器件中,用于同时测量相同 HS 微带的塞贝克系数、电导率和热导率。这些完全集成的 HS 微器件为系统研究通过周期性孔阵列的尺寸(即颈部和节距尺寸以及掺杂浓度)定制的热电器件传输性能提供了极好的平台。具体而言,对颈部尺寸在 16-34nm 范围内且固定节距尺寸为 60nm 的 HS 的热电器件传输性能进行了表征,并在 3.1×10(18)至 6.5×10(19)cm(-3)的掺杂范围内显示出明显的颈部尺寸依赖性。在 300K 下,在颈部尺寸为 16nm 的 HS 中发现了低至 1.8±0.2W/mK 的热导率,而在颈部尺寸为 24nm 的 HS 中显示出了优化的 zT 值。孔阵维度和掺杂浓度对 HS 热电性能的可控影响有助于提高对空穴结构中声子散射过程的理解,也有助于硅基热电器件的发展。

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