Oliva-Chatelain Brittany L, Ticich Thomas M, Barron Andrew R
Department of Chemistry, Rice University, Houston, TX 77005, USA.
Department of Chemistry, Centenary College of Louisiana, Shreveport, LA 71134, USA.
Nanoscale. 2016 Jan 28;8(4):1733-45. doi: 10.1039/c5nr04978d.
The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant.
将掺杂元素掺入硅纳米晶体（NC）和量子点（QD）的能力是在许多光电子应用中使用这些材料的关键技术挑战之一。与传统体半导体材料的掺杂不同，掺杂元素的位置可以在晶格内（c掺杂）、表面（s掺杂）或周围基质内（m掺杂）。本文综述了掺杂硅纳米晶体和量子点的各种合成策略，重点关注原位和合成后合成路线在掺杂剂结构位置和掺杂水平方面的有效性。总结了已应用于表征掺杂纳米晶体和量子点的方法，重点是所获得的信息，特别是为研究人员提供确定掺杂剂浓度和位置以及掺杂剂的电子和光子有效性的合适技术指南。
